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1. Package Outline Drawings
Package type : P622
a
) Notes 1. "" means theoretical dimensions. 2. The dimensions of the terminals are defined at the bottom. 3. The dimensions in ( ) means referential values.
Indication of Lot No.
MS6M 00765
7M BP25 TEA1 20
25A 1200V JAPAN O
Lot No.
3
Odered No. in monthly Manufactured month (Jan.Sep.:19,Oct.:O,Nov.:N,Dec.:D) Last digit of manufactured year
23
Dimensions in mm
a
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2Pin Descriptions Main circuit Symbol P U V W N B Description Positive input supply voltage. Output (U). Output (V). Output (W). Negative input supply voltage. Collector terminal of Brake IGBT.
Control circuit Symbol GNDU High side ground (U). ALMU VinU VccU Alarm signal output (U). Logic input for IGBT gate drive (U). High side supply voltage (U). Description

GNDV High side ground (V). ALMV VinV VccV Alarm signal output (V). Logic input for IGBT gate drive (V). High side supply voltage (V).

GNDW High side ground (W). ALMW Alarm signal output (W). VinW VccW Logic input for IGBT gate drive (W). High side supply voltage (W).

GND Vcc
Low side ground. Low side supply voltage.
VinDB Logic input for Brake IGBT gate drive. VinX VinY VinZ ALM Logic input for IGBT gate drive (X). Logic input for IGBT gate drive (Y). Logic input for IGBT gate drive (Z). Low side alarm signal output.
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3. Block Diagram
P VccU VinU
4 3
ALMU 2 RALM1.5k GNDU 1 VccV VinV
8 7
Pre Driver Vz U
ALMV 6 RALM1.5k GNDV 5 VccW VinW ALMW
12 11 10
Pre Driver Vz V
Pre Driver RALM1.5k Vz W
GNDW 9 Vcc VinX
14 16
Pre Driver Vz GND
13
VinY
17
Pre Driver Vz
VinZ
18
Pre Driver Vz B VinDB ALM
15 19
Pre Driver RALM1.5k Vz N
Pre-drivers include following functions 1.Amplifier for driver 2.Short circuit protection 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection
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4. Absolute Maximum Ratings Tc25 unless otherwise specified. Items Bus Voltage (between terminal P and N) Collector-Emitter Voltage *1 DC Inverter 1ms Duty= 100% *2 Collector Power Dissipation One transistor *3 DC Collector Current 1ms Forward Current Diode
Collector Power Dissipation One transistor *3
DC Surge Short operating
Symbol VDC VDC(surge) Vsc Vces Ic Icp -Ic Pc Ic Icp IF Pc Vcc Vin Iin VALM ALM Tj Topr Tstg Tsol Viso -
Min. 0 0 400 0 -0.5 -0.5 -0.5 -20 -40 -
Max. 900 1000 800 1200 25 50 25 139 15 30 15 139 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5
Units V V V V A A A W A A A W V V mA V mA Vrms Nm
Collector Current
Supply Voltage of Pre-Driver *4 Input Signal Voltage *5 Input Signal Current Alarm Signal Voltage *6 Alarm Signal Current *7 Junction Temperature Operating Case Temperature Storage Temperature Solder Temperature *8 Isolating Voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw Torque Mounting(M5)
Note
*1 Vces shall be applied to the input voltage between terminal P and U or or W or DB, N and U or V or W or DB. *2 125/FWD Rth(j-c)/(IcxVF MAX)=125/2.05/(25x2.0)x100>100% *3 Pc=125/IGBT Rth(j-c)=125/0.59=139W [Inverter] Pc=125/IGBT Rth(j-c)=125/0.59=139W [Brake] *4 Vcc shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 V shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13 *7 shall be applied to the input current to terminal No.2,6,10 and 19 *8 Immersion time101sec.
Brake
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5. Electrical Characteristics Tj25Vcc15V unless otherwise specified. 5.1 Main circuit Item Collector Current at off signal input Symbol ICES VCE VF ICES Conditions 1200V Vin terminal open. 25A Terminal Chip -=25A Terminal Chip 1200V Vin terminal open. Terminal Chip Terminal Chip Min. 1.2 Typ. 2.4 1.6 1.9 1.9 Max. 1.0 3.1 2.0 1.0 2.6 3.3 3.6 0.3 s Units mA V V mA V V
Inverter
Collector-Emitter saturation voltage Forward voltage of FWD Collector Current at off signal input
Brake
Collector-Emitter saturation voltage Forward voltage of Diode
VCE 15A VF ton toff trr -15A
Turn-on time Turn-off time Reverse recovery time
VDC600VTj=125 Ic25AFig.1Fig.6 VDC600V IF25A Fig.1Fig.6
5.2 Control circuit Item Supply current of P-side pre-driver (one unit) Supply current of N-side pre-driver Input signal threshold voltage Input Zener Voltage Symbol Iccp Conditions Switching Frequency : 015kHz Tc-20100 Fig.7 Min. Typ. Max. 15 Units mA
Iccn
1.00 1.25 -
1.35 1.60 8.0 2.0 1500
45 1.70 1.95 4.0 1575
mA
Vin(th) Vz
ON OFF Rin20k Fig.2 Tc-20 Tc25 Tc125
V V
1.1 1425
Alarm Signal Hold Time
tALM
ms
Resistor for current limit
RALM
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5.3 Protection Section (Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chips Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis 6. Thermal Characteristics (Tc=25) Item Junction to Case Thermal Resistance *9 Brake Case to Fin Thermal Resistance with Compound *9( For 1device Case is under the device ) 7. Noise Immunity Item Common mode rectangular noise Common mode lightning surge (Vdc=300V, Vcc=15V, Test Circuit Fig 5. Conditions Pulse width 1s,polarity ,10 minuets Judgeno over-current, no miss operating
Rise time 1.2us,Fall time 50s Interval 20s,10 times
Symbol
Conditions Tj=125
Min. 38
Typ. -
Max. -
Units A
Ioc Tj=125 tdoc tsc TjOH Tj=125 Tj=125 Fig.4 Surface ofIGBT Chips TjH VUV VH 11.0 0.2 20 0.5 12.5 23 150 5 8 A s s V
Symbol Inverter IGBT FWD IGBT Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f)
Min. -
Typ. 0.05
Max. 0.90 2.05 0.90 -
Units
/W
Min. 2.0
Typ. -
Max. -
Units kV
5.0
-
-
kV
Judgeno over-current, no miss operating
8. Recommended Operating Conditions Item DC Bus Voltage Power Supply Voltage of Pre-Driver Screw Torque (M5) 9. Weight Item Weight Symbol Wt Min. Typ. 270 Max. Units g Symbol VDC Vcc Min. 13.5 2.5 Typ. 15.0 Max. 800 16.5 3.0 Units V V Nm
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f f
1
Figure 1. Switching Time Waveform Definitions
/Vin Vge (Inside IPM) Fault (Inside IPM) /ALM
off on Gate On Gate Off on
off
normal alarm tALMMax. tALMMax. tALM 2ms(typ.)
FaultOver-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
Necessary conditions for alarm reset (refer to 1 to 3 in figure2.)
1
This represents the case when a failure-causing Fault lasts for a period more than tALM. The alarm resets when the input Vin is OFF and the Fault has disappeared.
2
This represents the case when the ON condition of the input Vin lasts for a period more than tALM. The alarm resets when the Vin turns OFF under no Fault conditions.
3
This represents the case when the Fault disappears and the Vin turns OFF within tALM. The alarm resets after lasting for a period of the specified time tALM.
/Vin
off on Ioc on
Ic
/ALM
tdoc
alarm tdoc
Figure 3. Over-current Protection Timing Diagram
Period 1 : When a collector current over the OC level flows and the OFF command is input within a period less than the trip delay time tdoc, the current is hard-interrupted and no alarm is output. Period 2 : When a collector current over the OC level flows for a period more than the trip delay time tdoc, the current is soft-interrupted. If this is detected at the lower arm IGBTs, an alarm is output.
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t SC
Ic IALM
Ic
Ic
IALM
IALM
Figure.4 Definition of tsc
CT
VccU 20k DC15V SW1 VinU GNDU Vcc 20k DC15V SW2 VinX GND IPM
P U V W N
AC400V
4700p
Noise
Earth
Cooling Fin
Figure 5. Noise Test Circuit
Vcc 20k DC15V HCPL4504 GND Vin
P IPM L DC600V Ic
N
Figure 6. Switching Characteristics Test Circuit
Icc
Vcc IPM
P U V W
DC15V P.G +8V fsw
Vin
GND
Figure 7. Icc Test Circuit
N
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10. Truth table 10.1 IGBT Control The following table shows the IGBT ON/OFF status with respect to the input signal Vin. The IGBT turn-on when Vin is at "Low" level under no alarm condition.
Input (Vin) Low High
Output (IGBT) ON OFF
10.2 Fault Detection (1) When a fault is detected at the high side, only the detected arm stops its output. At that time the IPM dosen't any alarm. (2) When a fault is detected at the low side, all the lower arms stop their outputs and the IPM outputs an alarm of the low side.
Fault OC High side U-phase UV TjOH OC High side V-phase UV TjOH OC High side W-phase UV TjOH OC Low side UV TjOH IGBT U-phase V-phase W-phase Low side OFF OFF OFF * * * * * * * * * * * * OFF OFF OFF * * * * * * * * * * * * OFF OFF OFF * * * * * * * * * * * * OFF OFF OFF ALM-U L L L H H H H H H H H H Alarm Output ALM-V H H H L L L H H H H H H ALM-W H H H H H H L L L H H H ALM H H H H H H H H H L L L
*Depend on input logic.
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11. Cautions for design and application 1. Trace routing layout should be designed with particular attention to least stray capacity between the primary and secondary sides of optical isolators by minimizing the wiring length between the optical isolators and the IPM input terminals as possible.

2. Mount a capacitor between Vcc and GND of each high-speed optical isolator as close to as possible.
Vcc-GND
3. For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH 0.8s.
tpHL,tpLH0.8usCMR
4. For the alarm output circuit, use low-speed type optical isolators with CTR 100%.
CTR100%
5. For the control power Vcc, use four power supplies isolated each. And they should be designed to reduce the voltage variations.
Vcc
6. Suppress surge voltages as possible by reducing the inductance between the DC bus P and N, and connecting some capacitors between the P and N terminals.
P-NP-N
7. To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF between the three-phase lines each and the ground.
AC
8. At the external circuit, never connect the control terminal GNDU to the main terminal U-phase, GNDV to V-phase, GNDW to W-phase, and GND to N-phase. Otherwise, malfunctions may be caused. VW N 9. Take note that an optical isolator's response to the primary input signal becomes slow if a capacitor is connected between the input terminal and GND.
-GND
10. Taking the used isolator's CTR into account, design with a sufficient allowance to decide the primary forward current of the optical isolator.
CTR
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11. In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) ()
12. Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm 100um10um
Mounting holes Heat sink +100m 0
13. This product is designed on the assumption that it applies to an inverter use. Sufficient examination is required
when applying to a converter use. Please contact Fuji Electric Co.,Ltd if you would like to applying to converter use.
14. Please see theFuji IGBT-IPM R SERIES APPLICATION MANUAL and Fuji IGBT MODULES N-SERIES
APPLICATION MANUAL. IGBT-IPM R IGBT N
15. There is thermal interference between nearby power devices, because the Econo IPM is a compact package.
Therefore you measure the case temperature just under the IGBT chips that showed in report MT6M04545, and estimate the chip temperature. Econo IPM MT6M04545
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12. Example of applied circuit
VccU +5V
HCPL 4504 0.1uF 20k
VccU + 10uF GNDU U V W P "H" UIGBT GNDU +5V
HCPL 4504 0.1uF 20k
+ 10uF
P
"H" UIGBT
R
R
V 0 2 C A C+
U V VccV W
V 0 2 C A C+
20k
VccV
20k 0.1uF
+ 10uF
B N "H" VIGBT
0.1uF
+ 10uF
B N
"H" VIGBT GNDV
GNDV
VccW
20k 0.1uF
VccW
+ 10uF "H" WIGBT
0.1uF
20k
+ 10uF
"H" WIGBT GNDW
GNDW
Vcc
20k
+ 10uF
IPM
"H" XIGBT
Vcc
20k
+ 10uF
IPM
0.1uF
0.1uF
"H" XIGBT GND
GND
0.1uF 20k
0.1uF 20k
"H" YIGBT
"H" YIGBT
0.1uF 20k
0.1uF 20k
"H" ZIGBT
"H" ZIGBT
0.1uF 20k
0.1uF 20k
"H" DB_IGBT
"H" DB_IGBT
TLP521 TLP521
(a)In case of use of High side alarm
(b)In case of no use of High side alarm
13. Package and Marking Please see the MT6M4140 which is packing specification of IPM IPM 14. Cautions for storage and transportation Store the modules at the normal temperature and humidity (5 to 35C, 45 to 75%).
(5354575%)
Avoid a sudden change in ambient temperature to prevent condensation on the module surfaces.
Avoid places where corrosive gas generates or much dust exists.
Store the module terminals under unprocessed conditions
.
Avoid physical shock or falls during the transportation.
15. Scope of application This specification is applied to the IGBT-IPM (type: 7MBP25TEA120). IGBT-IPM (7MBP25TEA120) 16. Based safety standards UL1557
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Characteristics 17-1.Control Circuit Characteristics(Respresentative)
Power supply current v s. Switching frequency Tj=125C (typ.)
30 P-side N-side
Vcc=1 7V Vcc=1 5V
Input signal threshold voltage v s. Power supply v oltage (typ.)
2.5
Tj=25C Tj =125C
Power s upply current : Icc (mA)
25 20 15 10 5 0 0
Input signal threshold voltage : Vin(on),Vin(off) (V)
2
} Vin(off)
1.5
} Vin(o n)
Vcc=1 3V
1
Vcc=1 7V Vcc=1 5V Vcc=1 3V
0.5
0 5 10 15 20 25 12 13 14 15 16 17 18 Switching frequency : fsw (kHz) Power supply voltage : Vcc (V)
Under v oltage v s. Junction tem perature (typ.)
14
Under voltage hys terisis vs. Jnc tion temperature (typ.) 1
Under voltage hys terisis : VH (V)
40 60 80 100 120 140
12
Under voltage : VUVT (V)
0.8
10 8 6 4 2 0 20 Junction tem perature : Tj (C)
0.6
0.4
0.2
0 20 40 60 80 100 120 140 Junction temperature : Tj (C)
Alarm hold tim e v s. Power supply v oltage (typ.)
3 200
Ov er heating characteristics TjO H,TjH v s. Vcc (typ.)
Over heating protection : TjOH (C) O H hysterisis : TjH (C)
TjOH 150
Alarm hold time : tALM (m Sec )
2.5 Tc=100C 2 1.5 1 0.5 0 12 Tc=25C
100
50 TjH 0 12
13
14
15
16
17
18
13
14
15
16
17
18
Power supply voltage : Vcc (V)
Power supply voltage : Vcc (V)
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17-2.Main Circuit Characteristics (Representative)
Collector current v s. Collector-Emitter v oltage (typ.) Tj=25C / Chip
50
Vcc=1 5V
Collector current v s. Collector-Em itter v oltage (typ.) Tj=25C / Term inal
50
Vcc=15V
Collector Current : Ic (A)
30
Vcc=1 7V
Vcc=1 3V
C ollector Current : Ic (A)
40
40
Vcc=1 7V
30
Vcc=1 3V
20
20
10
10
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-Em itter voltage : Vce (V)
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-Emitter voltage : Vce (V)
Collector current v s. Collector-Em itter v oltage (typ.) Tj=125C / Chip
50
Vcc=1 5V
Collector current v s. Collector-Emitter v oltage (typ.) Tj=125C / Term inal
50
Vcc=1 5V
Collector Current : Ic (A)
Collector Current : Ic (A)
40
Vcc=1 7V
40
Vcc=17V
30
30
Vcc=1 3V
Vcc=13V
20
20
10
10
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-Em itter voltage : Vce (V)
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-Emitter voltage : Vce (V)
Forward current v s. Forward v oltage (typ.) Chip
50
Forward current v s. Forward v oltage (typ.) Term inal
50
Forward Current : If (A)
25C 30
125C
Forward Current : If (A)
40
40 25C 30 125C
20
20
10
10
0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V)
0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V)
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Switching Loss v s. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=25C
Switching Loss : Eon,Eoff,Err (mJ/cycle) Switching Loss : Eon,Eoff,Err (m J/cyc le)
15
Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=125C
15 Eon
10 Eon
10
5
5 Eoff Err 0
Eoff Err 0 0 10 20 30 40 50 Collector Current : Ic (A)
0
10
20
30
40
50
Collector Current : Ic (A)
Reversed biased safe operating area Vcc=15V,Tj125 (min.)
350 Thermal resistance : Rth(j-c) (/W) 300 Collector current : Ic (A) 250 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 Collector-Emitter voltage : Vce (V)
Transient thermal resistance (max.)
FWD 1 IGBT
SCSOA (non-repetitive pulse)
0.1
RBSOA (Repetitive pulse)
0.01 0.001 0.01 0.1 1 10 Pulse width :Pw (sec)
Power derating for IG BT (m ax.) (per dev ice)
200 100
Power derating for FW D (max.) (per dev ice)
Collecter Power Dissipation : Pc (W )
Collecter Power Dissipation : Pc (W )
150
80
60
100
40
50
20
0 0 20 40 60 80 100 120 140 160 Case Tem perature : Tc (C)
0 0 20 40 60 80 100 120 140 160 Case Tem perature : Tc (C)
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Switching tim e v s. Collector current (typ.) Edc=600V,Vcc=15V,Tj=25C
10000
Switching tim e vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj=125C
10000
Switching time : ton,toff,tf (nSec)
ton 1000 toff
Switching time : ton,toff,tf (nSec )
toff ton 1000
100
tf
100
tf
10 0 10 20 30 40 Collector current : Ic (A) 50
10 0 10 20 30 40 50 Collector current : Ic (A)
Rev erse recovery characteristics trr,Irr v s.IF (typ.)
trr125C
Reverse recovery current:Irr(A) Reverse recovery time:trr(nsec)
trr25C 100
Irr25C 10 Irr125C
1 0 10 20 30 40 50 Forward c urrent:IF(A)
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17-3.Dynamic Brake Characteristics (Respresentative)
Collector current v s. Collector-Emitter v oltage (typ.) Tj=25C
40
Vcc=15V
Collector current v s. Collector-Emitter v oltage (typ.) Tj=125C
40
Vcc=1 5V
Collector Current : Ic (A)
30
Vcc=1 7V Vcc=1 3V
Collector C urrent : Ic (A)
30
Vcc=1 7V Vcc=13V
20
20
10
10
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-Em itter voltage : Vce (V)
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-Emitter voltage : Vce (V)
Transient thermal resistance (max.)
1 Thermal resistance : Rth(j-c) (/W) IGBT Collector current : Ic (A) 210 180 150 120 90 60 30 0 0.01 0.1 1 0
Reversed biased safe operating area Vcc=15V,Tj125 (min.)
0.1
SCSOA (non-repetitive pulse)
RBSOA (Repetitive pulse) 200 400 600 800 1000 1200 1400
0.01 0.001 Pulse width :Pw (sec)
Collector-Emitter voltage : Vce (V)
Power derating for IGBT (max.) (per dev ice)
200
Collecter Power Dissipation : Pc (W )
150
100
50
0 0 20 40 60 80 100 120 140 160 Case Tem perature : Tc (C)
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18. Reliability Test Items
Test categories Test items 1 Terminal strength (Pull test) 2 Mounting Strength 3 Vibration Pull force Test methods and conditions Reference norms EIAJ ED-4701
Test Method 401 Method Test Method 402 method Test Method 403 Condition code B
Number Acceptof ance sample number 5 (1:0)
: 20 N (main terminal) 10 N (control terminal) Test time : 10 1 sec. Screw torque : 2.5 ~ 3.5 Nm (M5) Test time : 10 1 sec. Range of frequency : 10500 Hz Sweeping time : 15 min. Acceleration : 100 m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) 4 Shock Maximum acceleration : 5000 m/s2 Pulse width 1.0 ms Direction : Each X,Y,Z axis Test time : 3 times/direction 5 Solderabitlity Solder temp. : 235 5 Immersion duration : 5.0 0.5 sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 6 Resistance to Solder temp. : 260 5 soldering heat Immersion time : 10 1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 1 High temperature Storage temp. : 125 5 storage Test duration : 1000 hr. 2 Low temperature Storage temp. : -40 5 storage Test duration : 1000 hr. 3 Temperature Storage temp. : 85 2 humidity storage Relative humidity : 85 5% Test duration : 1000hr. 4 Unsaturated Test temp. : 120 2 pressure cooker Atmospheric pressure : 1.7x105 Pa : 85 5% Test humidity Test duration : 96 hr. 5 Temperature Test temp. : Minimum storage temp. -40 5 cycle Maximum storage temp. 125 5 Normal temp. 5 ~ 35 Dwell time : Tmin ~ TN ~ Tmax ~ TN 1hr. 0.5hr. 1hr. 0.5hr. Number of cycles : 100 cycles 6 Thermal shock +0 Test temp. : High temp. side 100 -5
+5
5 5
(1:0) (1:0)
Mechanical Tests
Test Method 404 Condition code B
5
(1:0)
Test Method 303 Condition code A
5
(1:0)
Test Method 302 Condition code A
5
(1:0)
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E
5 5 5
(1:0) (1:0) (1:0)
5
(1:0)
Environment Tests
Test Method 105
5
(1:0)
Test Method 307 method Condition code A
5
(1:0)
Fluid used Dipping time Transfer time Number of cycles
: : : :
Low temp. side 0 -0 Pure water (running water) 5 min. par each temp. 10 sec. 10 cycles
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Test categories
Test items 1 High temperature reverse bias Test temp. Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
Test methods and conditions : Ta = 125 5 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E Vcc = 15V : 1000 hr. : 2 sec. : 18 sec. : Tj=100 5deg Tj 150 , Ta=25 5 : 15000 cycles
AcceptReference norms Number EIAJ ance of sample ED-4701 number
Test Method 101
5
(1:0)
Endurance Endurance Tests Tests
2 Intermitted operating life (Power cycle)
Test Method 106
5
(1:0)
19. Failure Criteria
Item Electrical characteristic Characteristic Leakage current Saturation voltage Forward voltage Thermal resistance IGBT FWD Symbol ICES VCE(sat) VF th(j-c) th(j-c) Ioc tALM Viso Failure criteria Lower limit Upper limit LSLx0.8 LSLx0.8 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 Unit mA V V /W /W ms Note
Over Current Protection Alarm signal hold time Isolation voltage Visual inspection Visual inspection Peeling Plating and the others
Broken insulation The visual sample
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
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Warnings
1. This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings.

2. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction.

3. When studying the device at a normal turn-off action, make sure that working paths of the turn-off voltage and current are within the RBSOA specification. And ,when studying the device duty at a short-circuit current non-repetitive interruption, make sure that the paths are also within the avalanche proof(PAV) specification which is calculated from the snubber inductance, the IPM inner inductance and the turn-off current. In case of use of IGBT-IPM over these specifications, it might be possible to be broken.
RBSOA (PAV)
4. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life.

5. If the product had been used in the environment with acid, organic matter, and corrosive gas (For example : hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily.

6. Use this product within the power cycle curve (Technical Rep.No. : MT6M04057). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary.
(No.: MT6M04057) TjTc (Tc)
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7. Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem.

8. If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity.

Caution
1. Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the semiconductor products made by Fuji Electric Device Technology, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design.

2. The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights.

3. The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability.

If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co., Ltd.
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